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- دانلود دیتاشیت
- دیتاشیت MJD31CT4G
MJD31CT4G دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | MJD31CT4G |
|---|---|
| حجم فایل | 72.066 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 11 |
دانلود دیتاشیت MJD31CT4G |
دانلود دیتاشیت |
|---|
سایر مستندات
MJD31 (NPN), MJD32 (PNP) 10 pages
MJD31CT4G 10 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi MJD31CT4G
- Transistor Type: NPN
- Operating Temperature: -65°C~+150°C@(Tj)
- Collector Current (Ic): 3A
- Power Dissipation (Pd): 15W
- Transition Frequency (fT): 3MHz
- DC Current Gain (hFE@Ic,Vce): 10@3A,4V
- Collector Cut-Off Current (Icbo): 50uA
- Collector-Emitter Breakdown Voltage (Vceo): 100V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1.2V@3A,375mA
- Package: TO-252
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Obsolete
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
- Power - Max: 15W
- Frequency - Transition: 3MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Base Part Number: MJD31
- detail: Bipolar (BJT) Transistor NPN 100V 3A 3MHz 15W Surface Mount DPAK